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Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Tarkista myöhemmin uudelleen.
€ 2,05
kpl (toimitus kelassa) (ilman ALV)
€ 2,542
kpl (toimitus kelassa) (Sis ALV:n)
5
€ 2,05
kpl (toimitus kelassa) (ilman ALV)
€ 2,542
kpl (toimitus kelassa) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
5 - 5 | € 2,05 | € 10,25 |
10 - 95 | € 2,00 | € 10,00 |
100 - 245 | € 1,95 | € 9,75 |
250 - 495 | € 1,90 | € 9,50 |
500+ | € 1,85 | € 9,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
450 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
130 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 6.22 x 2.39mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Tuotetiedot
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.