Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,094
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,117
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,094
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,117
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Tuotetiedot
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.