Tekninen dokumentti
Tekniset tiedot
Merkki
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Alkuperämaa
China
Tuotetiedot
N/P-Channel Dual MOSFET, Panasonic
MOSFET Transistors, Panasonic
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,098
1 kpl (8000 kpl/kela) (ilman ALV)
€ 0,122
1 kpl (8000 kpl/kela) (Sis ALV:n)
8000
€ 0,098
1 kpl (8000 kpl/kela) (ilman ALV)
€ 0,122
1 kpl (8000 kpl/kela) (Sis ALV:n)
8000
Tekninen dokumentti
Tekniset tiedot
Merkki
PanasonicChannel Type
N, P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSMini6 F3 B
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
6 Ω, 17 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
125 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.2mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.6mm
Height
0.5mm
Series
FG
Alkuperämaa
China
Tuotetiedot