Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Width
5.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.5mm
Minimum Operating Temperature
-55 °C
Height
2.3mm
Tuotetiedot
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,738
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,915
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,738
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,915
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 0,738 | € 7,38 |
50 - 190 | € 0,576 | € 5,76 |
200 - 490 | € 0,502 | € 5,02 |
500 - 990 | € 0,473 | € 4,73 |
1000+ | € 0,462 | € 4,62 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Package Type
PW Mold
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Width
5.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.5mm
Minimum Operating Temperature
-55 °C
Height
2.3mm
Tuotetiedot