Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Alkuperämaa
Japan
Tuotetiedot
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 16,00
€ 3,20 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 20,08
€ 4,016 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
€ 16,00
€ 3,20 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 20,08
€ 4,016 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 20 | € 3,20 | € 16,00 |
25 - 45 | € 2,90 | € 14,50 |
50+ | € 2,65 | € 13,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Alkuperämaa
Japan
Tuotetiedot