Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,80
€ 0,232 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 7,28
€ 0,291 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
€ 5,80
€ 0,232 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 7,28
€ 0,291 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China