Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Tuotetiedot
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,10
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,38
1 kpl (75 kpl/putki) (Sis ALV:n)
75
€ 1,10
1 kpl (75 kpl/putki) (ilman ALV)
€ 1,38
1 kpl (75 kpl/putki) (Sis ALV:n)
75
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Tuotetiedot