BD139 Transistor - RS Finland

AttributeType

Pin Count:3;Transistor Polarity:NPN;Minimum DC Current Gain hFE:25;Maximum Emitter Base Voltage VEBO:5V;Minimum Operating Temperature:-55°C;Transistor Configuration:Single;Maximum DC Collector Current Idc:1.5A;Maximum Collector Base Voltage VCBO:80V;Maximum Power Dissipation Pd:1.25W;Maximum Collector Emitter Voltage Vceo:80V;Automotive Standard:No;Maximum Operating Temperature:150°C;Package Type:TO-225;Width:3 mm;Product Type:Bipolar Transistor; (1)

Pin Count:3;Transistor Polarity:NPN;Minimum DC Current Gain hFE:25;Maximum Emitter Base Voltage VEBO:5V;Transistor Configuration:Single;Maximum DC Collector Current Idc:3A;Maximum Collector Base Voltage VCBO:80V;Maximum Power Dissipation Pd:1.25W;Maximum Collector Emitter Voltage Vceo:80V;Automotive Standard:No;Maximum Operating Temperature:150°C;Package Type:SOT-32;Height:2.9mm;Mount Type:Through Hole;Width:7.8 mm; (1)

Pin Count:3;Transistor Polarity:NPN;Minimum DC Current Gain hFE:25;Maximum Emitter Base Voltage VEBO:5V;Transistor Configuration:Single;Maximum DC Collector Current Idc:3A;Maximum Collector Base Voltage VCBO:80V;Maximum Power Dissipation Pd:1.25W;Maximum Collector Emitter Voltage Vceo:80V;Minimum Operating Temperature:0°C;Automotive Standard:No;Maximum Operating Temperature:150°C;Height:2.7mm;Package Type:SOT-32;Mount Type:Through Hole; (1)

Transistor Type:NPN;Number of Elements per Chip:1;Pin Count:3;Transistor Configuration:Single;Mounting Type:Through Hole;Maximum Emitter Base Voltage:5 V;Maximum Operating Temperature:+150 °C;Maximum DC Collector Current:3 A;Maximum Collector Base Voltage:80 V;Maximum Power Dissipation:1.25 W;Maximum Collector Emitter Voltage:80 V;Package Type:SOT-32;Manufacturer:STMicroelectronics;Dimensions:10.8 x 7.8 x 2.7mm;:; (1)

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STMicroelectronics BD139 Transistor, 3 A NPN, 80 V, 3-Pin SOT-32

RS Stock No. 168-6075

Brand STMicroelectronics

Maximum Emitter Base Voltage: 5 V
Maximum Power Dissipation: 1.25 W
Minimum DC Current Gain: 100, 40, 63

€ 16.25

2800 in stock now

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