Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,75
€ 1,15 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,22
€ 1,443 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 5,75
€ 1,15 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 7,22
€ 1,443 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 1,15 | € 5,75 |
50 - 245 | € 1,15 | € 5,75 |
250 - 495 | € 0,869 | € 4,34 |
500 - 1245 | € 0,814 | € 4,07 |
1250+ | € 0,699 | € 3,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Tuotetiedot