Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Product Details
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Stock information temporarily unavailable.
€ 21.60
€ 21.60 Each (Supplied in a Tube) (Exc. Vat)
€ 27.11
€ 27.11 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
€ 21.60
€ 21.60 Each (Supplied in a Tube) (Exc. Vat)
€ 27.11
€ 27.11 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Product Details
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.