Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
DO-247
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
400μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
420A
Maximum Operating Temperature
175°C
Length
16.26mm
Height
21.46mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
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Stock information temporarily unavailable.
€ 150.00
€ 5.00 Each (In a Tube of 30) (Exc. Vat)
€ 188.25
€ 6.275 Each (In a Tube of 30) (inc. VAT)
30
€ 150.00
€ 5.00 Each (In a Tube of 30) (Exc. Vat)
€ 188.25
€ 6.275 Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Diode
Mount Type
Through Hole
Package Type
DO-247
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
400μA
Maximum Forward Voltage Vf
2.25V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
420A
Maximum Operating Temperature
175°C
Length
16.26mm
Height
21.46mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
