Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Stock information temporarily unavailable.
€ 1,600.00
€ 1.60 Each (On a Reel of 1000) (Exc. Vat)
€ 2,008.00
€ 2.008 Each (On a Reel of 1000) (inc. VAT)
1000
€ 1,600.00
€ 1.60 Each (On a Reel of 1000) (Exc. Vat)
€ 2,008.00
€ 2.008 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
86A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-263
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
