Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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Stock information temporarily unavailable.
€ 132.50
€ 2.65 Each (Supplied on a Reel) (Exc. Vat)
€ 166.29
€ 3.326 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 132.50
€ 2.65 Each (Supplied on a Reel) (Exc. Vat)
€ 166.29
€ 3.326 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | € 2.65 | € 13.25 |
| 125+ | € 2.20 | € 11.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
