Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-LL
Series
STP50N60DM6
Mount Type
Through Hole
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
4.4mm
Length
28.9mm
Standards/Approvals
No
Width
10mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Stock information temporarily unavailable.
€ 215.00
€ 4.30 Each (In a Tube of 50) (Exc. Vat)
€ 269.82
€ 5.396 Each (In a Tube of 50) (inc. VAT)
50
€ 215.00
€ 4.30 Each (In a Tube of 50) (Exc. Vat)
€ 269.82
€ 5.396 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-LL
Series
STP50N60DM6
Mount Type
Through Hole
Pin Count
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
4.4mm
Length
28.9mm
Standards/Approvals
No
Width
10mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
