Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Stock information temporarily unavailable.
€ 25.00
€ 2.50 Each (Supplied in a Tube) (Exc. Vat)
€ 31.38
€ 3.14 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
€ 25.00
€ 2.50 Each (Supplied in a Tube) (Exc. Vat)
€ 31.38
€ 3.14 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price |
|---|---|
| 10 - 99 | € 2.50 |
| 100 - 499 | € 2.30 |
| 500+ | € 2.15 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.