Tekninen Dokumentti
Tekniset tiedot
Merkki
MicrochipProduct Type
Single MOSFETs
Channel Type
Type N
Maximum Continuous Drain Current Id
115mA
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-23
Series
2N7002
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
30nC
Maximum Power Dissipation Pd
0.36W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
2.9mm
Height
1.12mm
Standards/Approvals
Lead (Pb)-free/RoHS
Automotive Standard
No
Alkuperämaa
Thailand
Tuotetiedot
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
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€ 5,18
€ 0,518 kpl (toimitus teipissä) (ilman ALV)
€ 6,50
€ 0,65 kpl (toimitus teipissä) (Sis ALV:n)
Standardi
10
€ 5,18
€ 0,518 kpl (toimitus teipissä) (ilman ALV)
€ 6,50
€ 0,65 kpl (toimitus teipissä) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
MicrochipProduct Type
Single MOSFETs
Channel Type
Type N
Maximum Continuous Drain Current Id
115mA
Maximum Drain Source Voltage Vds
60V
Package Type
SOT-23
Series
2N7002
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
30nC
Maximum Power Dissipation Pd
0.36W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Length
2.9mm
Height
1.12mm
Standards/Approvals
Lead (Pb)-free/RoHS
Automotive Standard
No
Alkuperämaa
Thailand
Tuotetiedot
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
