Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07CD3NG

The Microchip silicon carbide power module excels in high-performance applications, delivering exceptional voltage handling and continuous drain current capabilities for demanding environments.

• Robust thermal reliability ensures optimal performance at elevated temperatures
  
• Integrated Schottky diode provides zero reverse recovery, enhancing switching behaviour
  
• Designed with a Kelvin source configuration for simplified gate driving
  
• Compact, isolated package allows direct mounting to heatsinks