Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Width
2.6mm
Automotive Standard
No
Tuotetiedot
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 502,50
€ 0,201 1 kpl (2500 kpl/kela) (ilman ALV)
€ 630,64
€ 0,252 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 502,50
€ 0,201 1 kpl (2500 kpl/kela) (ilman ALV)
€ 630,64
€ 0,252 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
| Määrä | Yksikköhinta | Per Kela |
|---|---|---|
| 2500 - 2500 | € 0,201 | € 502,50 |
| 5000 - 7500 | € 0,166 | € 415,00 |
| 10000 - 22500 | € 0,157 | € 392,50 |
| 25000+ | € 0,152 | € 380,00 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-10A
Maximum Collector Emitter Voltage Vceo
-50V
Package Type
SOT-89
Mount Type
Surface
Transistor Configuration
Single
Maximum Power Dissipation Pd
1.4W
Transistor Polarity
PNP
Minimum DC Current Gain hFE
80
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
4.6mm
Height
1.6mm
Standards/Approvals
No
Width
2.6mm
Automotive Standard
No
Tuotetiedot
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.