Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Tuotetiedot
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 13,90
€ 0,556 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 17,44
€ 0,698 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
€ 13,90
€ 0,556 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 17,44
€ 0,698 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
25
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 25 - 225 | € 0,556 | € 13,90 |
| 250 - 600 | € 0,50 | € 12,50 |
| 625+ | € 0,41 | € 10,25 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
10A
Maximum Collector Emitter Voltage Vceo
50V
Package Type
SOT-223
Mount Type
Surface
Transistor Configuration
Single
Transistor Polarity
NPN
Minimum DC Current Gain hFE
100
Maximum Emitter Base Voltage VEBO
5V
Maximum Power Dissipation Pd
1.4W
Minimum Operating Temperature
-65°C
Maximum Transition Frequency ft
1MHz
Pin Count
4
Maximum Operating Temperature
150°C
Length
6.7mm
Height
1.8mm
Standards/Approvals
No
Width
3.7mm
Automotive Standard
No
Tuotetiedot
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new PB-HCD (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.