Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 480,00
€ 480,00 30 kpl:n putki (ilman ALV)
€ 602,40
€ 602,40 30 kpl:n putki (Sis ALV:n)
1
€ 480,00
€ 480,00 30 kpl:n putki (ilman ALV)
€ 602,40
€ 602,40 30 kpl:n putki (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.