Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Forward Voltage Vf
3.6V
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Standards/Approvals
No
Length
10.4mm
Height
15.8mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 479,00
€ 479,00 30 kpl:n putki (ilman ALV)
€ 601,14
€ 601,14 30 kpl:n putki (Sis ALV:n)
1
€ 479,00
€ 479,00 30 kpl:n putki (ilman ALV)
€ 601,14
€ 601,14 30 kpl:n putki (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Forward Voltage Vf
3.6V
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
200°C
Standards/Approvals
No
Length
10.4mm
Height
15.8mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.