Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Tuotetiedot
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 18,10
€ 18,10 kpl (ilman ALV)
€ 22,72
€ 22,72 kpl (Sis ALV:n)
Standardi
1
€ 18,10
€ 18,10 kpl (ilman ALV)
€ 22,72
€ 22,72 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.5V
Maximum Power Dissipation Pd
270W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
20.15mm
Automotive Standard
No
Tuotetiedot
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.