Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Tuotetiedot
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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Varastotiedot eivät ole tilapäisesti saatavilla.
€ 30 000,00
€ 30,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 37 650,00
€ 37,65 1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 30 000,00
€ 30,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 37 650,00
€ 37,65 1 kpl (1000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1000
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Tuotetiedot
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
