Tekninen Dokumentti
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Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
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Varastotiedot eivät ole tilapäisesti saatavilla.
€ 29,60
€ 29,60 kpl (toimitus putkessa) (ilman ALV)
€ 37,15
€ 37,15 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
1
€ 29,60
€ 29,60 kpl (toimitus putkessa) (ilman ALV)
€ 37,15
€ 37,15 kpl (toimitus putkessa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Putki)
1
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
94nC
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Height
5mm
Length
34.8mm
Standards/Approvals
UL
Width
15.6mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
