Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
1.2kV
Series
MDmesh K5
Package Type
H2PAK-2
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
1.65Ω
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
165W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Length
10.98mm
Height
15.55mm
Width
10.98mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 4 000,00
€ 4,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 5 020,00
€ 5,02 1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 4 000,00
€ 4,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 5 020,00
€ 5,02 1 kpl (1000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1000
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
6A
Maximum Drain Source Voltage Vds
1.2kV
Series
MDmesh K5
Package Type
H2PAK-2
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
1.65Ω
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
165W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Length
10.98mm
Height
15.55mm
Width
10.98mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics N channel power MOSFET delivers reliable High voltage performance for demanding applications, ensuring optimal efficiency and power density in automotive environments.