Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 4 500,00
€ 4,50 1 kpl (1000 kpl/kela) (ilman ALV)
€ 5 647,50
€ 5,648 1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 4 500,00
€ 4,50 1 kpl (1000 kpl/kela) (ilman ALV)
€ 5 647,50
€ 5,648 1 kpl (1000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1000
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No