Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 1 600,00
€ 1,60 1 kpl (1000 kpl/kela) (ilman ALV)
€ 2 008,00
€ 2,008 1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 1 600,00
€ 1,60 1 kpl (1000 kpl/kela) (ilman ALV)
€ 2 008,00
€ 2,008 1 kpl (1000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1000
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
MDmesh DM2
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
9.35mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.