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Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
STB37N60
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
94mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
15.85mm
Standards/Approvals
AEC-Q101
Width
10.4mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 5 000,00
€ 5,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 6 275,00
€ 6,275 1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 5 000,00
€ 5,00 1 kpl (1000 kpl/kela) (ilman ALV)
€ 6 275,00
€ 6,275 1 kpl (1000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
1000
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-263
Series
STB37N60
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
94mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
210W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
15.85mm
Standards/Approvals
AEC-Q101
Width
10.4mm
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
