Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh II
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.1mm
Standards/Approvals
RoHS
Width
6.6mm
Height
2.4mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 2 442,50
€ 0,977 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 065,34
€ 1,226 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 2 442,50
€ 0,977 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 065,34
€ 1,226 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh II
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
27nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.1mm
Standards/Approvals
RoHS
Width
6.6mm
Height
2.4mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
