Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 3 125,00
€ 1,25 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 921,88
€ 1,569 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 3 125,00
€ 1,25 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 921,88
€ 1,569 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
338mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15.3nC
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.4mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
