Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 15,75
€ 3,15 kpl (toimitus kelassa) (ilman ALV)
€ 19,77
€ 3,953 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
5
€ 15,75
€ 3,15 kpl (toimitus kelassa) (ilman ALV)
€ 19,77
€ 3,953 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
5
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
6.2mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.