Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
60W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Tuotetiedot
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 2 442,50
€ 0,977 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 065,34
€ 1,226 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 2 442,50
€ 0,977 1 kpl (2500 kpl/kela) (ilman ALV)
€ 3 065,34
€ 1,226 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
60W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Tuotetiedot
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
