Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Tuotetiedot
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
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Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 3 875,00
€ 1,55 1 kpl (2500 kpl/kela) (ilman ALV)
€ 4 863,12
€ 1,945 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 3 875,00
€ 1,55 1 kpl (2500 kpl/kela) (ilman ALV)
€ 4 863,12
€ 1,945 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
15nC
Forward Voltage Vf
1.5V
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Height
2.17mm
Length
6.6mm
Standards/Approvals
No
Width
6.2mm
Automotive Standard
No
Tuotetiedot
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
