Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Series
STDRI
Automotive Standard
No
Tuotetiedot
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 6 500,00
€ 2,60 1 kpl (2500 kpl/kela) (ilman ALV)
€ 8 157,50
€ 3,263 1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 6 500,00
€ 2,60 1 kpl (2500 kpl/kela) (ilman ALV)
€ 8 157,50
€ 3,263 1 kpl (2500 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
2500
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Series
STDRI
Automotive Standard
No
Tuotetiedot
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.