Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 104,00
€ 5,20 kpl (toimitus putkessa) (ilman ALV)
€ 130,52
€ 6,526 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
20
€ 104,00
€ 5,20 kpl (toimitus putkessa) (ilman ALV)
€ 130,52
€ 6,526 kpl (toimitus putkessa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Putki)
20
| Määrä | Yksikköhinta | Per Putki |
|---|---|---|
| 20 - 98 | € 5,20 | € 10,40 |
| 100 - 198 | € 4,60 | € 9,20 |
| 200+ | € 3,95 | € 7,90 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.