Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Operating Temperature
150°C
Height
26.7mm
Width
5.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
Korea, Republic Of
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 16,60
€ 16,60 kpl (toimitus putkessa) (ilman ALV)
€ 20,83
€ 20,83 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
1
€ 16,60
€ 16,60 kpl (toimitus putkessa) (ilman ALV)
€ 20,83
€ 20,83 kpl (toimitus putkessa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Putki)
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Operating Temperature
150°C
Height
26.7mm
Width
5.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
Korea, Republic Of
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.