Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
RoHS
Width
6.2mm
Series
H
Energy Rating
221mJ
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8,54
€ 0,854 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 10,72
€ 1,072 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 8,54
€ 0,854 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 10,72
€ 1,072 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
RoHS
Width
6.2mm
Series
H
Energy Rating
221mJ
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
