Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 26,40
€ 26,40 kpl (ilman ALV)
€ 33,13
€ 33,13 kpl (Sis ALV:n)
Standardi
1
€ 26,40
€ 26,40 kpl (ilman ALV)
€ 33,13
€ 33,13 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
216A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
2
Maximum Power Dissipation Pd
714W
Configuration
Single
Package Type
ECOPACK
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.