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STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Series
V
Automotive Standard
No
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 167,50
€ 3,35 kpl (toimitus putkessa) (ilman ALV)
€ 210,21
€ 4,204 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
50
€ 167,50
€ 3,35 kpl (toimitus putkessa) (ilman ALV)
€ 210,21
€ 4,204 kpl (toimitus putkessa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Putki)
50
| Määrä | Yksikköhinta | Per Putki |
|---|---|---|
| 50 - 120 | € 3,35 | € 16,75 |
| 125+ | € 2,80 | € 14,00 |
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.75mm
Height
20.15mm
Standards/Approvals
RoHS
Series
V
Automotive Standard
No
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
