Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 5,70
€ 5,70 kpl (ilman ALV)
€ 7,15
€ 7,15 kpl (Sis ALV:n)
Standardi
1
€ 5,70
€ 5,70 kpl (ilman ALV)
€ 7,15
€ 7,15 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
1
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
375W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
H
Automotive Standard
No
Tuotetiedot
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.