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STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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Varastotiedot eivät ole tilapäisesti saatavilla.
€ 67,50
€ 2,25 1 kpl (30 kpl/putki) (ilman ALV)
€ 84,71
€ 2,824 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 67,50
€ 2,25 1 kpl (30 kpl/putki) (ilman ALV)
€ 84,71
€ 2,824 1 kpl (30 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
30
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.9mm
Height
5.1mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
