Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
10.57mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 7,90
€ 3,95 1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 9,91
€ 4,957 1 kpl (2 kpl/pakkaus) (Sis ALV:n)
Standardi
2
€ 7,90
€ 3,95 1 kpl (2 kpl/pakkaus) (ilman ALV)
€ 9,91
€ 4,957 1 kpl (2 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
2
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 2 - 18 | € 3,95 | € 7,90 |
| 20 - 98 | € 3,50 | € 7,00 |
| 100 - 198 | € 3,15 | € 6,30 |
| 200+ | € 2,70 | € 5,40 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
DeepGate, STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
10.57mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.