Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 84,00
€ 4,20 kpl (toimitus kelassa) (ilman ALV)
€ 105,42
€ 5,271 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
20
€ 84,00
€ 4,20 kpl (toimitus kelassa) (ilman ALV)
€ 105,42
€ 5,271 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
20
| Määrä | Yksikköhinta | Per Kela |
|---|---|---|
| 20 - 98 | € 4,20 | € 8,40 |
| 100 - 198 | € 3,75 | € 7,50 |
| 200+ | € 3,25 | € 6,50 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
80V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
21mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
193nC
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Width
15.8mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.