Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 12,00
€ 6,00 kpl (toimitus kelassa) (ilman ALV)
€ 15,06
€ 7,53 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
2
€ 12,00
€ 6,00 kpl (toimitus kelassa) (ilman ALV)
€ 15,06
€ 7,53 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
2
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
180A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Series
STripFET H7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
2.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
315W
Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
180nC
Maximum Gate Source Voltage Vgs
-20, +20V
Maximum Operating Temperature
175°C
Height
4.8mm
Length
15.25mm
Standards/Approvals
No
Width
10.4mm
Automotive Standard
No
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.