Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Automotive Standard
No
Tuotetiedot
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
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LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 132,50
€ 2,65 1 kpl (50 kpl/putki) (ilman ALV)
€ 166,29
€ 3,326 1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 132,50
€ 2,65 1 kpl (50 kpl/putki) (ilman ALV)
€ 166,29
€ 3,326 1 kpl (50 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
50
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Automotive Standard
No
Tuotetiedot
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
