Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 4 500,00
€ 1,50 1 kpl (3000 kpl/kela) (ilman ALV)
€ 5 647,50
€ 1,882 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 4 500,00
€ 1,50 1 kpl (3000 kpl/kela) (ilman ALV)
€ 5 647,50
€ 1,882 1 kpl (3000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
3000
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
20V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Tuotetiedot
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.