Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Width
8.1mm
Height
900μm
Length
8.1mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 7 650,00
€ 2,55 1 kpl (3000 kpl/kela) (ilman ALV)
€ 9 600,75
€ 3,20 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 7 650,00
€ 2,55 1 kpl (3000 kpl/kela) (ilman ALV)
€ 9 600,75
€ 3,20 1 kpl (3000 kpl/kela) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
3000
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
110W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
150°C
Width
8.1mm
Height
900μm
Length
8.1mm
Standards/Approvals
No
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
