Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
0.95mm
Length
8mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 275,00
€ 5,50 kpl (toimitus kelassa) (ilman ALV)
€ 345,12
€ 6,902 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
50
€ 275,00
€ 5,50 kpl (toimitus kelassa) (ilman ALV)
€ 345,12
€ 6,902 kpl (toimitus kelassa) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Tuotantopakkaus (Kela)
50
| Määrä | Yksikköhinta | Per Kela |
|---|---|---|
| 50 - 120 | € 5,50 | € 27,50 |
| 125+ | € 4,60 | € 23,00 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
0.95mm
Length
8mm
Standards/Approvals
No
Automotive Standard
No
Tuotetiedot
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.