Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 13,50
€ 1,35 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 16,94
€ 1,694 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 13,50
€ 1,35 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 16,94
€ 1,694 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 10 - 90 | € 1,35 | € 13,50 |
| 100 - 490 | € 0,898 | € 8,98 |
| 500 - 990 | € 0,714 | € 7,14 |
| 1000 - 2990 | € 0,674 | € 6,74 |
| 3000+ | € 0,652 | € 6,52 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Package Type
PowerFLAT
Series
STripFET
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
100W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.35mm
Standards/Approvals
No
Width
5.4mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.