Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Varastotiedot eivät ole tilapäisesti saatavilla.
€ 15,00
€ 1,50 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 18,82
€ 1,882 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 15,00
€ 1,50 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 18,82
€ 1,882 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
| Määrä | Yksikköhinta | Per Pakkaus |
|---|---|---|
| 10 - 90 | € 1,50 | € 15,00 |
| 100 - 490 | € 1,05 | € 10,50 |
| 500+ | € 0,848 | € 8,48 |
Tekninen Dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Alkuperämaa
China
Tuotetiedot
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.